N-ch Trench MOS FET

文件：103.88 Kbytes Page：9 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=88A@ TC=25℃ ·Drain Source Voltage- : VDSS=660V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.35Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

N-Channel Enhancement Mode Power MOSFET

Description The GT035N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters l Synchronous Rectification

N-ch Trench MOS FET

General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATU

N-Channel PowerTrench MOSFET

文件：673.33 Kbytes Page：10 Pages