| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：H30R90；Reverse Conducting IGBT with monolithic body diode Features: • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat | INFINEON 英飞凌 |   | ||
丝印代码：H30T90；Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with anti-parallel diode Features: • 1.1V Forward voltage of antiparallel diode • TrenchStop® and Fieldstop technology for 900 V applications offers: - very tight parameter distribution - high ruggedness, temperature stab | INFINEON 英飞凌 | | ||
N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT 文件：159.35 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | | ||
丝印代码：H30T90；Soft Switching Series 文件：293.73 Kbytes Page：12 Pages | INFINEON 英飞凌 | | ||
N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT 文件：159.35 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
9788 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON |
23+ |
30A,900V |
20000 |
全新原装假一赔十 |
|||
INFINEON/英飞凌 |
0 |
* |
10 |
||||
INF |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
INFINEON/英飞凌 |
25+ |
PBFREE |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
INFINEON |
25+23+ |
TO247 |
73452 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
INFINEON |
24+ |
TO-247 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON |
25+ |
TO-247 |
30000 |
代理全新原装现货,价格优势 |
|||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
RS30N90D规格书下载地址
RS30N90D参数引脚图相关
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- sanken
- sa950
- sa28
- s9018
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- RS30H11AAA0B.RS30H11AA00P
- RS30H11AAA0B
- RS3000
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- RS2KFA
- RS2KF
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2019-6-4
DdatasheetPDF页码索引
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