SINGLE-PHASE SILICON BRIDGE

FEATURES Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 50A peak

整流桥

RS210系列整流桥，采用玻璃钝化工艺，具有极快的恢复时间和极小的过电损耗特性，产品稳定性强，漏电流低。专门用于显示器、电视机、打印机、开关电源、适配器等全波整流中的通用电路。 • 玻璃钝化工艺\n• 低反向漏电流\n• 浪涌过载额定值至30A峰值\n• 不含卤素且符合RoHS及Reach测试标准;

丝印代码：RS2105；Ultra Low ON-Resistance, Low Voltage, Dual, SPDT Analog Switch

FEATURES • -3dB Bandwidth: 30MHz • High Speed, Typically 50ns • Supply Range: +1.8V to +5.5V • Low ON-State Resistance, 0.6Ω(TYP) • Break-Before-Make Switching • Rail-to-Rail Operation • TTL/CMOS Compatible • Extended Industrial Temperature Range: -40°C to +125°C APPLICATIONS • Wearab

丝印代码：RS2105；Ultra Low ON-Resistance, Low Voltage, Dual, SPDT Analog Switch

FEATURES • -3dB Bandwidth: 30MHz • High Speed, Typically 50ns • Supply Range: +1.8V to +5.5V • Low ON-State Resistance, 0.6Ω(TYP) • Break-Before-Make Switching • Rail-to-Rail Operation • TTL/CMOS Compatible • Extended Industrial Temperature Range: -40°C to +125°C APPLICATIONS • Wearab

Low ON-Resistance, Low Voltage, Dual, SPDT Analog Switch

The RS2102 is a dual, low on-resistance, singlepole double-throw (SPDT) analog switch that is designed to operate from1.8 V to 5.5 V. \n\nThe RS2102 device can handle both analog and digital signals. It features fast switching speeds (tON = 29ns, tOFF = 17ns) and low on-resistance (2.4Ω TYP). \n\nTh • -3dB Bandwidth: 120MHz \n• High Speed, Typically 29ns \n• Supply Range: +1.8V to +5.5V \n• Low ON-State Resistance, 2.4Ω(TYP) \n• Break-Before-Make Switching \n• Rail-to-Rail Operation \n• TTL/CMOS Compatible \n• Extended Industrial Temperature  Range: -40°C to +125°C \nAPPLICATIONS• Wearable Devi;

Ultra Low ON-Resistance, Low Voltage, SPDT Analog Switch

The RS2103 is a single-pole double-throw (SPDT) analog switch that is designed to operate from 1.8 V to 5.5 V. \n\nThe RS2103 device can handle both analog and digital signals. It features fast switching speeds (50ns) and low on-resistance (0.6Ω TYP). \n\nApplications include signal gating, chopping • -3dB Bandwidth: 30MHz \n• High Speed, Typically 50ns \n• Supply Range: +1.8V to +5.5V \n• Low ON-State Resistance, 0.6Ω(TYP) \n• Break-Before-Make Switching \n• Rail-to-Rail Operation \n• TTL/CMOS Compatible \n• Extended Industrial Temperature  Range: -40°C to +125°C \n• MicroSIZE PACKAGES: SOT363;

Ultra Low ON-Resistance, Low Voltage, Dual, SPDT Analog Switch

FEATURES • -3dB Bandwidth: 30MHz • High Speed, Typically 50ns • Supply Range: +1.8V to +5.5V • Low ON-State Resistance, 0.6Ω(TYP) • Break-Before-Make Switching • Rail-to-Rail Operation • TTL/CMOS Compatible • Extended Industrial Temperature Range: -40°C to +125°C APPLICATIONS • Wearab

HALF-BRIDGE DRIVER

文件：665.13 Kbytes Page：15 Pages

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High

POWER RECTIFIERS(2.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers Ideally suite for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

POWER RECTIFIERS(2.0A,500-1000V)

Voltage Follower

文件：348.91 Kbytes Page：16 Pages