SILICON BRIDGE RECTIFIERS

VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A FEATURES ◇ Rating to 1000V PRV ◇ Surge overload rating to 30 Amperes peak ◇ Ideal for printed circuit board ◇ Reliable low cost construction utilizing molded plastic technique results in inexpensive product ◇ Lead solderable per MIL-STD-202 method

GLASS PASSIVATED BRIDGE RECTIFIERS

FORWARD CURRENT - 1.5Amperes REVERSE VOLTAGE - 50 to 1000 Volts FEATURES ● Surge overload rating -50 amperes peak ● Ideal for printed circuit board ● Plastic material has Underwriters Laboratory flammability classification 94V-0 ● Mounting position :Any

GLASS PASSIVATED BRIDGE RECTIFIERS

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TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP