Silicon N-Channel MOS FET

Features • High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 19 dB, PAE = 65 (f = 520 MHz) • Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm)

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET

Features • High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 19 dB, PAE = 65 (f = 520 MHz) • Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm)

PCS TDMA/CDMA Power Amplifier 1750 - 1910 MHz

Description M/A-COM’s MAAPSS0003 is a high power, high efficiency linear power amplifier in a miniature FQFP-N 4mm plastic package. The MAAPSS0003 includes a 2-stage amplifier and bias control network. Analog signals control output power and power-off for active and standby modes. Features • Hi

PCS TDMA/CDMA Power Amplifier 1750 - 1910 MHz

Description M/A-COM’s MAAPSS0003 is a high power, high efficiency linear power amplifier in a miniature FQFP-N 4mm plastic package. The MAAPSS0003 includes a 2-stage amplifier and bias control network. Analog signals control output power and power-off for active and standby modes. Features • Hi

PCS TDMA/CDMA Power Amplifier 1750 - 1910 MHz

Description M/A-COM’s MAAPSS0003 is a high power, high efficiency linear power amplifier in a miniature FQFP-N 4mm plastic package. The MAAPSS0003 includes a 2-stage amplifier and bias control network. Analog signals control output power and power-off for active and standby modes. Features • Hi

S-Band Phase Shifter 2.3-4.1 GHz

Description The MAPCGM0003 is a 6-bit Phase Shifter with Parallel TTL Input Control and is packaged in a micro lead package (MLP). This product is fully matched to 50 ohms on both the input and output. This part has 360º of phase coverage in 5.6º increments. Each device is 100 RF tested on wafer

E-Series I/Q Modulator 1805 - 1880 MHz

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