SiliconN-ChannelMOSFET

Features •HighOutputPower,HighGain,HighEfficiency Pout=+33dBm,LinearGain=21dB,PAE=68(f=520MHz) •SmallOutlinePackage(WSON0303-2:3.0×3.0×0.8mm)

SiliconN-ChannelMOSFET

Features •HighOutputPower,HighGain,HighEfficiency Pout=+33dBm,LinearGain=21dB,PAE=68(f=520MHz) •SmallOutlinePackage(WSON0303-2:3.0×3.0×0.8mm)

10.1Medical-GradeTabletwithIntel®Atom™ProcessorandPCAPTouchscreen

Features ƒEquippedwithDeviceOn/iServicesoftwareforremotedevicemanagement ƒIntel®Atom™processorwithsupportforbothWindowsandAndroidOS ƒ10.1fullHDprojectedcapacitivetouchscreenwithscratch-resistant Corning®Gorilla®Glass ƒSupportsactivestyluspen,glovedoperation,

8Industrial-GradeTabletwithQualcomm®Snapdragon™660Processor,Android12withAndroidEnterpriseRecommended

Features ƒQualcomm®Snapdragon™660processorwithAndroid12andAndroid EnterpriseRecommendedcertification ƒ8industrial-gradeLCDwith1920x1200resolution,400-nitbrightness,and upto12,000hoursMTBF ƒProjectedcapacitivetouchscreenwithscratch-resistantCorning®Gorilla® Glas

Carbonbrushtypestaticeliminator

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OpticalAdapter

文件：238.62 Kbytes Page：2 Pages

airflowsensorunits

文件：102.48 Kbytes Page：2 Pages