Silicon N-Channel MOS FET

Features • High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68 (f = 520 MHz) • Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm)

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET

Features • High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68 (f = 520 MHz) • Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm)

10.1 Medical-Grade Tablet with Intel® Atom™ Processor and PCAP Touchscreen

Features ƒ Equipped with DeviceOn/iService software for remote device management ƒ Intel® Atom™ processor with support for both Windows and Android OS ƒ 10.1 full HD projected capacitive touchscreen with scratch-resistant Corning® Gorilla® Glass ƒ Supports active stylus pen, gloved operation,

8 Industrial-Grade Tablet with Qualcomm® Snapdragon™ 660 Processor, Android 12 with Android Enterprise Recommended

Features ƒ Qualcomm® Snapdragon™ 660 processor with Android 12 and Android Enterprise Recommended certification ƒ 8 industrial-grade LCD with 1920x1200 resolution, 400-nit brightness, and up to 12,000 hours MTBF ƒ Projected capacitive touchscreen with scratch-resistant Corning® Gorilla® Glas

Carbon brush type static eliminator

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Optical Adapter

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air flowsensor units

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