Photointerrupter, double-layer mold type

Features 1) Compact package based on the double-mold. 2) Method High resolution (slit width = 2.0mm) 3) Gap between emitter and detector is 2.0mm. Applications Floppy disk drives Movie equipment Cameras Printers

Photointerrupter, Small type

文件：72.2 Kbytes Page：2 Pages

封装/外壳：PCB 安装 包装：管件 描述：SENSOR OPT SLOT PHOTOTRAN PCB MT 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 晶体管输出

Photointerrupter Double Mold Type

Photointerrupter, Small type

文件：72.2 Kbytes Page：2 Pages

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

PNP video transistor

DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package. APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors.

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to t

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B