型号 功能描述 生产厂家&企业 LOGO 操作
RO4350

RF Power Field Effect Transistor

865--960 MHz, 28 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Perfor

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RO4350

RF Power LDMOS Transistor

ETC

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RF Power LDMOS Transistor

ETC

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GaN Doherty Hybrid Amplifier

Description Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 45, and powers 7W over the frequency range

RFHIC

rfhic

GaN Doherty Hybrid Amplifier

文件:586.38 Kbytes Page:6 Pages

RFHIC

rfhic

GaN Hybrid Power Amplifier

文件:1.28273 Mbytes Page:8 Pages

HONGFA

宏发电声

RF Power LDMOS Transistors

文件:985.86 Kbytes Page:21 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistors

文件:437.43 Kbytes Page:15 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

文件:1.27025 Mbytes Page:20 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

GaN Doherty Hybrid Amplifier

文件:586.39 Kbytes Page:6 Pages

RFHIC

rfhic

GaN Doherty Hybrid Amplifier

文件:581.27 Kbytes Page:6 Pages

RFHIC

rfhic

RF Power LDMOS Transistors

文件:948.24 Kbytes Page:19 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

ETC

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RF LDMOS Wideband Integrated Power Amplifiers

ETC

知名厂家

RF LDMOS Wideband Integrated Power Amplifiers

ETC

知名厂家

RF LDMOS Wideband Integrated Power Amplifier

ETC

知名厂家

RF LDMOS Wideband Integrated Power Amplifier

ETC

知名厂家

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件:868.17 Kbytes Page:13 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Gallium Arsenide pHEMT RF Power Field Effect Transistor

ETC

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Wideband Synthesizer with Integrated VCO

The ADF4350 allows implementation of fractional-N or integer-N phase-locked loop (PLL) frequency synthesizers if used with an external loop filter and external reference frequency. The ADF4350 has an integrated voltage controlled oscillator (VCO) with a fundamental output frequency ranging from

AD

亚德诺

HEYClean® Brass Pressure Equalization and Drain Plugs

文件:158.47 Kbytes Page:1 Pages

HeycoHeyco.

海科

HEYClean® Brass Pressure Equalization and Drain Plugs

文件:152.36 Kbytes Page:1 Pages

HeycoHeyco.

海科

FET Input Analog Front End with ADC Driver

文件:799.17 Kbytes Page:38 Pages

AD

亚德诺

FET Input Analog Front End with ADC Driver

文件:799.17 Kbytes Page:38 Pages

AD

亚德诺

RO4350产品属性

  • 类型

    描述

  • 型号

    RO4350

  • 制造商

    FREESCALE

  • 制造商全称

    Freescale Semiconductor, Inc

  • 功能描述

    RF Power Field Effect Transistor

更新时间:2025-8-11 9:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HellermannTyton
2022+
25
全新原装 货期两周
PULSE
2021+
DIP/SOP
16500
十年专营原装现货,假一赔十
24+
N/A
80000
一级代理-主营优势-实惠价格-不悔选择
WESTCODE
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
PULSE
24+
65230
PULSE(普思)
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
PULSE(普思)
24+
1476
原装现货,免费供样,技术支持,原厂对接
A
24+
b
3
莱尔德
22+
NA
500000
万三科技,秉承原装,购芯无忧
HellermannTyton
17
全新原装 货期两周

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