Description

Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 45, and powers 7W over the frequency range from 2300MHz to 2400MHz. Integrated with Asymmetrical Doherty configurations, RTH Series is packaged in a very small form-factor 28 x 19 x 4.8mm on AIN (aluminum nitride) board which provides excellent thermal dissipation.

Product Features

• GaN on SiC Chip on Board

• Surface Mount Hybrid Type

• Asymmetric Doherty Amplifier

• High Efficiency

• No Matching circuit needed

Applications

• RF Sub-Systems

• Base Station

• RRH

• 4G/ LTE system

• Small cell