TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit • Including two devices in SM6 (super mini type with 6 leads) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process and miniaturize equipment.

Bias resistor built-in transistor (BRT), 2-in-1

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony

Complementary Enhancement Mode Field Effect Transistor

General Description The AON4603 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4603 is Pb-free (meets ROHS & Sony 259 specifications).

TO-3 POWER TRANSISTOR SOCKET

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7A竊?0V N-CHANNEL MOSFET

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