Bipolar Integrated Circuit with Photodetection Function

Bipolar Integrated Circuit with Photodetection Function For brightness control systems Features ● Wavelength characteristics close to human visual sensitivity ● External parts not required ● Good output voltage linearity with respect to incident illuminance

封装/外壳：3-SIP，侧视图 包装：卷带（TR） 描述：SENSOR OPT 700NM AMB LSTFR 103 传感器，变送器 光学传感器 - 环境光，IR 红外线，UV 紫外线传感器

封装/外壳：径向 - 3 引线 包装：卷带（TR） 描述：SENSOR OPT 700NM AMBIENT RADIAL 传感器，变送器 光学传感器 - 环境光，IR 红外线，UV 紫外线传感器

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony

Complementary Enhancement Mode Field Effect Transistor

General Description The AON4603 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4603 is Pb-free (meets ROHS & Sony 259 specifications).

TO-3 POWER TRANSISTOR SOCKET

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7A竊?0V N-CHANNEL MOSFET

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