PNP EPITAXIAL TYPE (SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High current type (IC(MAX) = −800mA) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Low VCE (sat) • Complementary to RN1421~RN1427

Bias resistor built-in transistor (BRT)

Feature：High current\nPolarity：PNP\nInternal Connection：Single\nComplementary Product：RN1425\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC -0.8 A \nCollector-emitter voltage VCEO -50 V ;

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS PNP 50V 0.8A SMINI 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

SPEECH NETWORK WITH DIALER INTERFACE

INTRODUCTION The KA2425A is telephone speech network integrated circuit which includes transmit amp, receive amp, side tone amp, DC loop interface function, DTMF input, voltage regulator for speech, a regulated output voltage for a dialer, and equalization circuit . FEATURES • Low voltage opera

SPEECH NETWORK WITH DIALER INTERFACE

INTRODUCTION The KA2425A is telephone speech network integrated circuit which includes transmit amp, receive amp, side tone amp, DC loop interface function, DTMF input, voltage regulator for speech, a regulated output voltage for a dialer, and equalization circuit . FEATURES • Low voltage opera

4-PORT TRANSFER SWITCH

Product Description The RF2425 is a very low-cost single-throw, double-pole GaAs MESFET switch. There are two bidirectional input/output channels which can be turned off or on by a single logic control line. Two of the ports may be tied together externally to make a transmit/receive switch. The d

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the