N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

MOSFET, N-Channel Enhancement-Mode, 250V, 3.5 Ohm

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temper Low threshold \nHigh input impedance \nLow input capacitance \nFast switching speeds \nLow on-resistance \nFree from secondary breakdown \nLow input and output leakage;

N-Channel Enhancement-Mode Vertical DMOS FET

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N-Channel Enhancement-Mode Vertical DMOS FET

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Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET

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N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

Low Threshold Dual N-Channel Enhancement-Mode

General Description The Supertex TN2425TG is a dual low threshold enhancement mode (normally off) transistor utilizing a vertical DMOS structure and Supertex’s well proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transi

Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET

文件：435.11 Kbytes Page：5 Pages

N-Channel Enhancement-Mode Vertical DMOS FET

文件：686.85 Kbytes Page：5 Pages

N-Channel Enhancement-Mode Vertical DMOS FET

文件：768.61 Kbytes Page：14 Pages

N-Channel Enhancement-Mode Vertical DMOS FET

文件：686.85 Kbytes Page：5 Pages

Low Threshold Dual N-Channel Enhancement-Mode

SPEECH NETWORK WITH DIALER INTERFACE

INTRODUCTION The KA2425A is telephone speech network integrated circuit which includes transmit amp, receive amp, side tone amp, DC loop interface function, DTMF input, voltage regulator for speech, a regulated output voltage for a dialer, and equalization circuit . FEATURES • Low voltage opera

SPEECH NETWORK WITH DIALER INTERFACE

INTRODUCTION The KA2425A is telephone speech network integrated circuit which includes transmit amp, receive amp, side tone amp, DC loop interface function, DTMF input, voltage regulator for speech, a regulated output voltage for a dialer, and equalization circuit . FEATURES • Low voltage opera

4-PORT TRANSFER SWITCH

Product Description The RF2425 is a very low-cost single-throw, double-pole GaAs MESFET switch. There are two bidirectional input/output channels which can be turned off or on by a single logic control line. Two of the ports may be tied together externally to make a transmit/receive switch. The d