TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process ● Complementary to RN1301~1306

Bias resistor built-in transistor (BRT)

Application Scope：General-purpose\nPolarity：PNP\nInternal Connection：Single\nComplementary Product：RN1302\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current IC -0.1 A \nCollector-emitter voltage VCEO -50 V ;

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PREBIAS PNP 50V 0.1A USM 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：AUTO AEC-Q SINGLE PNP , R1=10KOH 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

8-bit 50MSPS Video A/D Converter with Clamp Function

Description The CXD2302Q is an 8-bit CMOS A/D converter for video with synchronizing clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum conversion rate of 50MSPS. Features • Resolution: 8 bit ± 1/2LSB (DL) • Maximum sampling frequency: 50MSPS •

Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

Features: • High Breakdown Voltage and High Reliability • High Switching Speed • Capable of Being Mounted in a Variety of Methods

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI2302DS in SOT23. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.