位置:首页 > IC中文资料 > RN2104ACT

RN2104ACT价格

参考价格:¥0.2831

型号:RN2104ACT(TPL3) 品牌:Toshiba Semiconductor an 备注:这里有RN2104ACT多少钱,2026年最近7天走势,今日出价,今日竞价,RN2104ACT批发/采购报价,RN2104ACT行情走势销售排行榜,RN2104ACT报价。
型号 功能描述 生产厂家 企业 LOGO 操作
RN2104ACT

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Extra small package (CST3) is applicable for extra high density fabrication. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever mor

TOSHIBA

东芝

RN2104ACT

Bias resistor built-in transistor (BRT)

Application Scope:General-purpose\nPolarity:PNP\nInternal Connection:Single\nComplementary Product:RN1104ACT\nRoHS Compatible Product(s) (#):Available\nAssembly bases:泰国 Collector Current IC -0.08 A \nCollector-emitter voltage VCEO -50 V ;

TOSHIBA

东芝

封装/外壳:SC-101,SOT-883 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PREBIAS PNP 50V 0.08A CST3 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置

ETC

知名厂家

256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms

The MPC2104/5/6/7 are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. These products utilize synchronous or asynchr

MOTOROLA

摩托罗拉

256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms

The MPC2104P (256KB) and MPC2105P (512KB) are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. All of these cache m

MOTOROLA

摩托罗拉

3V AM/FM 1 CHIP TUNER IC (FOR DIGITAL TUNING SYSTEM)

TA2104BN, TA2104BFN are AM/FM 1 chip tuner ICs, which are designed for portable Radios and 3V Head phone Radios.

TOSHIBA

东芝

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

SUTEX

更新时间:2026-5-15 16:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
02+
402
9045
全新 发货1-2天
TOSHIBA/东芝
24+
SOT-523
33487
郑重承诺只做原装进口现货
TOSHIBA/东芝
2540+
CST3
8595
只做原装正品假一赔十为客户做到零风险!!
TOSHIBA
2016+
SOT523
3500
只做原装,假一罚十,公司可开17%增值税发票!
TOSHIBA
25+
SOT523
30000
代理全新原装现货,价格优势
TOSHIBA/东芝
2023+
SOT-523
50000
原厂全新正品旗舰店优势现货
TOSHIBA
24+
SOT-523
8000
新进库存/原装
TOSHIBA
24+
SOD723
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
TOSHIBA/东芝
2223+
SOT-523
26800
只做原装正品假一赔十为客户做到零风险
TOSHIBA
22+
SOD723
20000
公司只做原装 品质保障

RN2104ACT数据表相关新闻

  • RN4020-VRMBEC133

    进口代理

    2023-4-7
  • RN1723-I/RM100

    RN1723-I/RM100

    2023-3-27
  • RN 1/4W 1K F T/B A1

    属性 参数值 商品目录 金属膜电阻 阻值(欧姆) 1K 精度 ±1%_ 安装类型 通孔 功率 1/4W 温度系数 ±50ppm/°C属性 参数值 商品目录 金属膜电阻 阻值(欧姆) 1K 精度 ±1%_ 安装类型 通孔 功率 1/4W 温度系数 ±50ppm/°C

    2020-12-4
  • RN2706JE

    类别 分立半导体产品 晶体管 - 双极(BJT)- 阵列 - 预偏置 制造商 Toshiba Semiconductor and_Storage 系列 - 包装 带卷(TR) 零件状态 有源 晶体管类型 2 PNP - 预偏压(双)(耦合发射器) 电流 - 集电极 (Ic)(最大值) 100mA 电压 - 集射极击穿(最大值) 50V 电阻器 - 基极 (R1) 4.7 千欧 电阻

    2020-10-15
  • RN171-I/RM原装MicrochipWiFi模块

    只做原装,假一罚十,可开16%增值税票。TE.NXP.ON.Renesas.Microchip.英飞凌.ALLEGRO

    2019-3-14
  • RN4984FE绝对原装正品现货

    瀚佳科技(深圳)有限公司 专业工厂一站式全套配单服务

    2019-1-13