位置:首页 > IC中文资料 > RN1902

RN1902晶体管资料

  • RN1902别名:RN1902三极管、RN1902晶体管、RN1902晶体三极管

  • RN1902生产厂家

  • RN1902制作材料:Si-N+R

  • RN1902性质:表面帖装型 (SMD)_差分放大器射极输出 (Dual)

  • RN1902封装形式:贴片封装

  • RN1902极限工作电压:50V

  • RN1902最大电流允许值:0.1A

  • RN1902最大工作频率:<1MHZ或未知

  • RN1902引脚数:6

  • RN1902最大耗散功率:0.2W

  • RN1902放大倍数

  • RN1902图片代号:H-23

  • RN1902vtest:50

  • RN1902htest:999900

  • RN1902atest:0.1

  • RN1902wtest:0.2

  • RN1902代换 RN1902用什么型号代替

RN1902价格

参考价格:¥0.2831

型号:RN1902FE(T5L,F,T) 品牌:Toshiba Semiconductor an 备注:这里有RN1902多少钱,2026年最近7天走势,今日出价,今日竞价,RN1902批发/采购报价,RN1902行情走势销售排行榜,RN1902报价。
型号 功能描述 生产厂家 企业 LOGO 操作
RN1902

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope:General-purpose\nPolarity:NPN×2\nInternal Connection:2-in-1 (Point-symmetrical)\nComplementary Product:RN2902\nAEC-Q101:Conform(*)\nRoHS Compatible Product(s) (#):Available\nAssembly bases:日本 / 泰国 Collector Current (Q1) IC 0.1 A \nCollector Current (Q2) IC 0.1 A \nCollector-emitter voltage (Q1) VCEO 50 V \nCollector-emitter voltage (Q2) VCEO 50 V ;

TOSHIBA

东芝

RN1902

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

文件:271.5 Kbytes Page:7 Pages

TOSHIBA

东芝

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope:General-purpose\nPolarity:NPN×2\nInternal Connection:2-in-1 (Point-symmetrical)\nComplementary Product:RN2902FE\nAEC-Q101:Conform(*)\nRoHS Compatible Product(s) (#):Available\nAssembly bases:日本 / 泰国 Collector Current (Q1) IC 0.1 A \nCollector Current (Q2) IC 0.1 A \nCollector-emitter voltage (Q1) VCEO 50 V \nCollector-emitter voltage (Q2) VCEO 50 V ;

TOSHIBA

东芝

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope:General-purpose\nPolarity:NPN×2\nInternal Connection:2-in-1 (Point-symmetrical)\nComplementary Product:RN2902FS\nRoHS Compatible Product(s) (#):Available Collector Current (Q1) IC 0.05 A \nCollector Current (Q2) IC 0.05 A \nCollector-emitter voltage (Q1) VCEO 20 V \nCollector-emitter voltage (Q2) VCEO 20 V ;

TOSHIBA

东芝

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

文件:179.74 Kbytes Page:8 Pages

TOSHIBA

东芝

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

文件:550.07 Kbytes Page:8 Pages

TOSHIBA

东芝

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

文件:140.2 Kbytes Page:8 Pages

TOSHIBA

东芝

Power MOSFET(Vdss=20V)

Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

IRF

500kHz Multi-Output, Low-Noise Power-Supply Controllers for Notebook Computers

General Description The MAX1901/MAX1902/MAX1904 are buck-topology, step-down, switch-mode, power-supply controllers that generate logic-supply voltages in battery-powered systems. These high-performance, dual/triple-output devices include on-board power-up sequencing, power-good signaling with

MAXIM

美信

TAPE CARRIER LOW NOISE GaAs FET???

DESCRIPTION The MGF1902B is a low noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metal ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. FEATURE

MITSUBISHI

三菱电机

1:9 Signal Distribution?

Description The SK1900 is an extremely fast, stable, and accurate low skew 1:9 clock / signal distributor featuring a synchronous enable, which allows the outputs to be turned off and on without the risk of an unpredictable output pulse. The D - flip-flop is triggered on the falling edge of the c

SEMTECH

先之科

Load Share Controller

文件:147.17 Kbytes Page:6 Pages

TI

德州仪器

RN1902产品属性

  • 类型

    描述

  • Package name:

    SOT-363 (US6)

  • Width×Length×Height(mm):

    2.0 x 2.1 x 0.9

  • Number of pins:

    6

  • Surface mount package:

    Y

  • Polarity:

    NPN x 2

  • Internal Connection:

    2-in-1 (Point-symmetrical)

  • Q1Base Series Resistance (Typ.)(kΩ):

    10

  • Q1Base-Emitter Resistance (Typ.)(kΩ):

    10

  • Q1VCEO (Max)(V):

    50

  • Q1IC (Max)(A):

    0.1

  • Q2Base Series Resistance (Typ.)(kΩ):

    10

  • Q2Base-Emitter Resistance (Typ.)(kΩ):

    10

  • Q2VCEO (Max)(V):

    50

  • Q2IC (Max)(A):

    0.1

  • AEC-Q101:

    Qualified(*)

更新时间:2026-5-14 19:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
25+
SOT666
32000
TOSHIBA/东芝全新特价RN1902FE即刻询购立享优惠#长期有货
TOSHIBA
24+/25+
56000
原装正品现货库存价优
TOSHIBA
24+
SOT-363
8540
只做原装正品现货或订货假一赔十!
SOT-363
23+
NA
15659
振宏微专业只做正品,假一罚百!
TOSHIBA/东芝
25+
SOD-563
15000
只做进口原装假一罚百
TOSHIBA
24+
SOT-363
25000
一级专营品牌全新原装热卖
TOSHIBA(东芝)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
TOSHIBA/东芝
25+
SOT-363
880000
明嘉莱只做原装正品现货
TOSHIBA
22+
SSMini6-F1
3000
原装正品,支持实单
AUK
2223+
SOT563363
26800
只做原装正品假一赔十为客户做到零风险

RN1902数据表相关新闻

  • RN4020-VRMBEC133

    进口代理

    2023-4-7
  • RN1723-I/RM100

    RN1723-I/RM100

    2023-3-27
  • RN 1/4W 1K F T/B A1

    属性 参数值 商品目录 金属膜电阻 阻值(欧姆) 1K 精度 ±1%_ 安装类型 通孔 功率 1/4W 温度系数 ±50ppm/°C属性 参数值 商品目录 金属膜电阻 阻值(欧姆) 1K 精度 ±1%_ 安装类型 通孔 功率 1/4W 温度系数 ±50ppm/°C

    2020-12-4
  • RN2706JE

    类别 分立半导体产品 晶体管 - 双极(BJT)- 阵列 - 预偏置 制造商 Toshiba Semiconductor and_Storage 系列 - 包装 带卷(TR) 零件状态 有源 晶体管类型 2 PNP - 预偏压(双)(耦合发射器) 电流 - 集电极 (Ic)(最大值) 100mA 电压 - 集射极击穿(最大值) 50V 电阻器 - 基极 (R1) 4.7 千欧 电阻

    2020-10-15
  • RN171-I/RM原装MicrochipWiFi模块

    只做原装,假一罚十,可开16%增值税票。TE.NXP.ON.Renesas.Microchip.英飞凌.ALLEGRO

    2019-3-14
  • RN4984FE绝对原装正品现货

    瀚佳科技(深圳)有限公司 专业工厂一站式全套配单服务

    2019-1-13