Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：NPN×2\nInternal Connection：2-in-1 (Common emitter)\nComplementary Product：RN2709\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Collector Current (Q1) IC 0.1 A \nCollector Current (Q2) IC 0.1 A \nCollector-emitter voltage (Q1) VCEO 50 V \nCollector-emitter voltage (Q2) VCEO 50 V ;

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：216.1 Kbytes Page：6 Pages

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：NPN×2\nInternal Connection：2-in-1 (Common emitter)\nComplementary Product：RN2709JE\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current (Q1) IC 0.1 A \nCollector Current (Q2) IC 0.1 A \nCollector-emitter voltage (Q1) VCEO 50 V \nCollector-emitter voltage (Q2) VCEO 50 V ;

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.

文件：100.24 Kbytes Page：4 Pages

PRE-DRIVER FOR ULTRA-HIGH RESOLUTION COMPUTER DISPLAY

Description The CXA1709P is a bipolar IC designed for use in ultra-high resolution computer displays.

Integrated Circuit Dual Balanced Modulator for Video Cameras

Description: The NTE1709 is an integrated circuit in a 9–Lead SIP type package that incorporates two balanced modulators Features: • Dual Balanced Modulator • No External Bias Circuit Required • Carrier Suppression: 40dB Typ

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF

DUAL HIGH-SPEED FET DRIVER

文件：178.82 Kbytes Page：5 Pages