SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power

N-Channel 100-V (D-S) MOSFET

文件：1.71381 Mbytes Page：8 Pages

Customer Specification

Construction Diameters (In) 1) Component 1 2 X 1 COND a) Conductor 24 (10/34) AWG Tinned Copper 0.024 b) Insulation 0.016 Wall, Nom. Polyethylene(PE) 0.056 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 2 BLACK 2) Cable Assembly 2 Components Cabled a) Twists: 8.0 Twists/foot (min)

CAPTIVE PANEL SCREWS

文件：395.93 Kbytes Page：1 Pages

Shorty Plugs

文件：112.72 Kbytes Page：1 Pages

CCFL INVERTER

文件：1.66101 Mbytes Page：2 Pages

EMC DESIGN GUIDE FOR ST MICROCONTROLLERS

文件：662.36 Kbytes Page：38 Pages