Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：NPN×2\nInternal Connection：2-in-1 (Common emitter)\nComplementary Product：RN2701\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current (Q1) IC 0.1 A \nCollector Current (Q2) IC 0.1 A \nCollector-emitter voltage (Q1) VCEO 50 V \nCollector-emitter voltage (Q2) VCEO 50 V ;

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：258.649 Kbytes Page：7 Pages

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：NPN×2\nInternal Connection：2-in-1 (Common emitter)\nComplementary Product：RN2701JE\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current (Q1) IC 0.1 A \nCollector Current (Q2) IC 0.1 A \nCollector-emitter voltage (Q1) VCEO 50 V \nCollector-emitter voltage (Q2) VCEO 50 V ;

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

文件：550.16 Kbytes Page：8 Pages

VSC system processor IC

The BA1701 is a monolithic audio-compression system controller IC that uses VSC∗. When used in combination with an analog delay circuit and low-pass filter, it can replay recorded audio at 1 to 2.5 times the recording speed, without altering the pitch. Features 1) Wide operating voltage range

SURFACE MOUNT SWITCHING DIODES

Case : SOT-23 Molded Plastic Operating Temperature : -65°C to 150°C

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. FEATURES • 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. FEATURES • 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3

PHS MULTI-FUNCTION GaAs MMIC

文件：538.39 Kbytes Page：16 Pages