丝印代码：85；High Conductance Low Leakage Diode

High Conductance Low Leakage Diode Sourced from Process 1T.

SURFACE MOUNT SWITCHING DIODES

Case : SOT-23 Molded Plastic Operating Temperature : -65°C to 150°C

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT） 描述：DIODE GEN PURP 30V 50MA SOT23-3 分立半导体产品 二极管 - 整流器 - 单

DIODE GEN PURP 30V 50MA SOT23-3

High Conductance Low Leakage Diode

High Conductance Low Leakage Diode

丝印代码：85A；High Conductance Low Leakage Diode

High Conductance Low Leakage Diode Sourced from Process 1T.

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT） 描述：DIODE GEN PURP 30V 50MA SOT23-3 分立半导体产品 二极管 - 整流器 - 单

High Conductance Low Leakage Diode

VSC system processor IC

The BA1701 is a monolithic audio-compression system controller IC that uses VSC∗. When used in combination with an analog delay circuit and low-pass filter, it can replay recorded audio at 1 to 2.5 times the recording speed, without altering the pitch. Features 1) Wide operating voltage range

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. FEATURES • 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. FEATURES • 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3

PHS MULTI-FUNCTION GaAs MMIC

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