丝印代码：QC；TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High current type (IC (max) = 800mA) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Low VCE (sat) • Complementary to RN2401~RN2406

Bias resistor built-in transistor (BRT)

Feature：High current\nPolarity：NPN\nInternal Connection：Single\nComplementary Product：RN2423\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 0.8 A \nCollector-emitter voltage VCEO 50 V ;

丝印代码：QC；Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：547.59 Kbytes Page：8 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 50V 0.8A SMINI 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING HAMMER DRIVER, PULSE MOTOR DRIVER)

SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. • High Collector Breakdown Voltage : VCEO=-120V (Min.) • Complementary to KTD1413.

5-Dot Red/Green LED Level Meter

SMALL SIGNAL GaAs FET?

DESCRIPTION The MGF1423B, low-noise GaAs FET with an N-channel Schottky gate, is designed for use in S to Ku band amplifiers. FEATURES ● High linear power gain GLP = 11 dB (TYP.) @ f = 12 GHz ● High output power at 1 dB gain compression P1dB = 13dBm (TYP.) @ f = 12 GHz ● High reliabil

RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS

DESCRIPTION The SD1423 is a gold metallization epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation for cellular base station applications. The SD1423 is designed as a medium power output device or as the driver for the SD1424. ■

HIGH PERFORMANCE 4K X 4 CMOS STATIC RAM

文件：298 Kbytes Page：8 Pages