TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

For Muting and Switching Applications 1. High emitter-base voltage : VEBO= 25v (min) 2. High reverse hfe : reverse hFE = 150 (typ.) (VCE= −2V, IC= −4ma) 3. Low on resistance : RON= 1Ω(typ.) (IB= 5mA) 4. With built-in bias resistors 5. Simplify circuit design 6. Reduce a quantity of part

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Customer Specification

Construction 1) Conductor a) Material Tinned Copper, per ASTM B-33 and CID-A-A-59551, latest revision b) Stranding Solid 2) Braid Data a) Nominal Dimensions 2.000 x .120 Inches b) AWG of Ends 30 c) Number of Carriers 48 d) Nominal Percent Coverage N/A e) Total Number of Ends 1436 f) Appr

Bulk Metal® Foil Technology Precision Trimming Potentiometers, QPL Approved 1/4 Inch Square, Qualified to MIL-PRF-22097, Char. F, RJ26

FEATURES • Temperature coefficient of resistance (TCR): ± 10 ppm/°C maximum4) (- 55 °C to + 150 °C ref. at + 25 °C); through the wiper5); ± 25 ppm/°C • Load life stability: 0.1 typical ΔR, 1.0 maximum ΔR under full rated power of 0.25 W at 85 °C for 1000 h • Settability: 0.05 typical; 0.1 m

500 RZ/10 GW

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500 RZ/11 GW

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500 RZ/12 GW

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