Medium Power Amplifier Camera Flash Applications

Medium Power Amplifier Camera Flash Applications • hFE = 100~320 (VCE = -2V, IC = -0.5V) • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.)

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -20V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1V(Max) @IC= -1A APPLICATIONS · Low frequency amplifier

Medium Power Amplifier Camera Flash Applications

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：管件 描述：TRANS PNP 20V 5A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：管件 描述：TRANS PNP 20V 5A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Customer Specification

Construction 1) Conductor a) Material Tinned Copper, per ASTM B-33 and CID-A-A-59551, latest revision b) Stranding Solid 2) Braid Data a) Nominal Dimensions 2.000 x .120 Inches b) AWG of Ends 30 c) Number of Carriers 48 d) Nominal Percent Coverage N/A e) Total Number of Ends 1436 f) Appr

Bulk Metal® Foil Technology Precision Trimming Potentiometers, QPL Approved 1/4 Inch Square, Qualified to MIL-PRF-22097, Char. F, RJ26

FEATURES • Temperature coefficient of resistance (TCR): ± 10 ppm/°C maximum4) (- 55 °C to + 150 °C ref. at + 25 °C); through the wiper5); ± 25 ppm/°C • Load life stability: 0.1 typical ΔR, 1.0 maximum ΔR under full rated power of 0.25 W at 85 °C for 1000 h • Settability: 0.05 typical; 0.1 m

500 RZ/10 GW

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500 RZ/11 GW

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500 RZ/12 GW

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