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RN1207晶体管资料
RN1207别名:RN1207三极管、RN1207晶体管、RN1207晶体三极管
RN1207生产厂家:日本东芝公司
RN1207制作材料:Si-N+R
RN1207性质:表面帖装型 (SMD)
RN1207封装形式:直插封装
RN1207极限工作电压:50V
RN1207最大电流允许值:0.1A
RN1207最大工作频率:<1MHZ或未知
RN1207引脚数:3
RN1207最大耗散功率:0.1W
RN1207放大倍数:
RN1207图片代号:A-57
RN1207vtest:50
RN1207htest:999900
- RN1207atest:0.1
RN1207wtest:0.1
RN1207代换 RN1207用什么型号代替:RN1007,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RN1207 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2207~2209 | TOSHIBA 东芝 | ||
RN1207 | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 文件:287.26 Kbytes Page:5 Pages | TOSHIBA 东芝 | ||
RN1207 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | TOSHIBA 东芝 | ||
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 文件:287.26 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, | POLYFET | |||
3/ 6/ 9/ 12 / 15 / 18 VOICE ROM Description The MSSnn07 is a single-chip CMOS VLSI ROM that can memorize voice data up to nn seconds using MOSEL qualified coding method (5-bit MPCM) at 6.00 KHz in 32 sections with arbitrary length. Both the volume and pitch can be masked and different for each entry each sentence. 5 versatile | MOSEL 茂矽电子 | |||
FOR LCD TVS, PIF AND SIF SYSTEM FOR LCD TVS, PIF AND SIF SYSTEM FEATURES ● PIF circuit • High input sensitivity • 3-stage variable-gain PIF amplifier • Output with black noise inverter (TA8805F) • Output without black noise inverter (TA1207F) • High-speed response peak AGC with dual time constant | TOSHIBA 东芝 | |||
130 MHz/85 MHz RGB Video Amplifier System with Blanking 文件:435.35 Kbytes Page:24 Pages | NSC 国半 | |||
130 MHz/85 MHz RGB Video Amplifier System with Blanking 文件:435.35 Kbytes Page:24 Pages | NSC 国半 |
RN1207产品属性
- 类型
描述
- 型号
RN1207
- 制造商
TOSHIBA
- 制造商全称
Toshiba Semiconductor
- 功能描述
TOSHIBA Transistor Silicon NPN Epitaxial Type(PCT Process)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
1049+ |
TO-92 |
200 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOSHIBA |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
TOSHIBA |
23+ |
TO-92 |
2700 |
原厂原装正品 |
|||
24+ |
5000 |
公司存货 |
|||||
RECOM |
25+ |
电源模块 |
1520 |
就找我吧!--邀您体验愉快问购元件! |
|||
RECOM |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
TOSHIBA |
23+ |
TO-92 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
RECOM |
25+ |
DIP |
55000 |
原厂渠道原装正品假一赔十 |
|||
TOSH |
25+ |
4100 |
公司现货库存 |
||||
TOSHIBA/东芝 |
25+ |
TO-92S(TB) |
880000 |
明嘉莱只做原装正品现货 |
RN1207规格书下载地址
RN1207参数引脚图相关
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RN1207数据表相关新闻
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原厂原装 正品现货 价格优势 有单必成
2022-4-24RN 1/4W 1K F T/B A1
属性 参数值 商品目录 金属膜电阻 阻值(欧姆) 1K 精度 ±1%_ 安装类型 通孔 功率 1/4W 温度系数 ±50ppm/°C属性 参数值 商品目录 金属膜电阻 阻值(欧姆) 1K 精度 ±1%_ 安装类型 通孔 功率 1/4W 温度系数 ±50ppm/°C
2020-12-4RN2706JE
类别 分立半导体产品 晶体管 - 双极(BJT)- 阵列 - 预偏置 制造商 Toshiba Semiconductor and_Storage 系列 - 包装 带卷(TR) 零件状态 有源 晶体管类型 2 PNP - 预偏压(双)(耦合发射器) 电流 - 集电极 (Ic)(最大值) 100mA 电压 - 集射极击穿(最大值) 50V 电阻器 - 基极 (R1) 4.7 千欧 电阻
2020-10-15RN171-I/RM原装MicrochipWiFi模块
只做原装,假一罚十,可开16%增值税票。TE.NXP.ON.Renesas.Microchip.英飞凌.ALLEGRO
2019-3-14
DdatasheetPDF页码索引
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