150 V, 20 A Common-Cathode Diode

General Description This device has the lowest QRR of any 150 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications  AC/DC and DC/DC output rectification  Output and freewheeling diodes  Motor drive circuits  DC-AC inverters

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：DIODE CC 150V 10A DUAL TO252 分立半导体产品 二极管 - 整流器 - 阵列

快速硅二极管，具有一流的EMI性能VRRM     - 150 V, 200 V, 300 V, 600 VIF(AVG)   - 3 A - 40 AQRR       - 5 nC - 61 nC

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 1500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Pulse Circuits · High Voltage Power Supplies

N-Channel Super Trench Power MOSFET

General Features ● VDS =150V,ID =20A RDS(ON)=59mΩ (typical) @ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested

High Voltage Power MOSFET Extended FBSOA

文件：148.52 Kbytes Page：5 Pages

High Voltage Power MOSFET Extended FBSOA

文件：148.52 Kbytes Page：5 Pages