| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RM05N60AJ | 600V, 1.4Ω N通道MOSFET | RICHTEK 立锜科技 |   | |
N-Channel Power Field Effect Transistor Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl | HSMC 华昕 | | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. • Built–In Free Wheeling Diode • Built–In Gate Protecti | MOTOROLA 摩托罗拉 | | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. • Built–In Free Wheeling Diode • Built–In Gate Protection | ONSEMI 安森美半导体 | | ||
POWERLUX IGBT This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. • Built–In Free Wheeling Diode • Built–In Gate Protection Zener Diode • Industry Standard Package (SOT223) • High Speed Eoff: Typic | MOTOROLA 摩托罗拉 | | ||
Insulated Gate Bipolar Transistor 文件：138.49 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TA-I TECH |
25+ |
5000 |
公司优势库存 热卖中! |
||||
SAMSUNG/三星 |
23+ |
SMD |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
RM05N60AJ规格书下载地址
RM05N60AJ参数引脚图相关
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RM05N60AJ数据表相关新闻
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2018-12-30
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