GLASS PASSIVATED SILICON RECTIFIERS

文件：260.88 Kbytes Page：2 Pages

GLASS PASSIVATED SILICON RECTIFIER

文件：260.11 Kbytes Page：3 Pages

标准整流管

GLASS PASSIVATED SILICON RECTIFIERS

Features • Low forward voltage drop • High current capability • High capability • High surge current capability

GLASS PASSIVATED SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 16 Amperes)

文件：26.11 Kbytes Page：2 Pages

GLASS PASSIVATED SILICON RECTIFIER (VOLTAGE RANGE 50 to 800 Volts CURRENT 16 Amperes)

文件：23.26 Kbytes Page：2 Pages

Standard Rectifiers

标准整流管

GLASS PASSIVATED SILICON RECTIFIER

文件：264.02 Kbytes Page：3 Pages

MICROWAVE POWER GaAs FET

High-power GaAs FET (small signal gain stage) S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic

Silicon PNP(NPN) epitaxial planer transistor

Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages