GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Amperes Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 utilizing Flame retardant epoxy molding compound 1.5 ampere operation at TA=55°C with no thermal runaway Glass passiva

1.5A GENERAL PURPOSE GPP DIODES

1.5A GENERAL PURPOSE GPP DIODES

1.5 AMP GLASS PASSIVATED RECTIFIERS

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Glass passivated junction

CURRENT 1.5 Amperes VOLTAGE 50 to 1000 Volts

Features • The plastic package carries Underwrites Laboratory Flammability Classification 94V-0 • High current capability • Low reverse leakage • Glass passivated junction • Low forward voltage drop • High temperature soldering guaranteed : 350℃ /10 seconds, 0.375(9.5mm) lead length, 5lbs.(2

1.5 AMP GLASS PASSIVATED RECTIFIERS

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Glass passivated junction

GLASS PASSIVATED JUNCTION RECTIFIER

VOLTAGE: 50 TO 1000V CURRENT: 1.5A FEATURES • Molded case feature for auto insertion • Glass passivated chip • High current capability • Low leakage current • High surge capability • High temperature soldering guaranteed: 250°C/10sec/0.375(9.5mm)lead length at 5 lbs tension

GLASS PASSIVATED SILICON RECTIFIER

FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High temperature soldering guaranteed: 250 °C/10 seconds,0.375”(9.5mm) le

1.5 AMP GLASS PASSIVATED RECTIFIERS

FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Glass passivated junction

Glass Passivated Junction Plastic Rectifier

Features ◇ Low cost ◇ Low leakage ◇ Low forward voltage drop ◇ High current capability

GLASS PASSIVATED SILICON RECTIFIER

FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High temperature soldering guaranteed: 250 °C/10 seconds,0.375”(9.5mm) le

整流二极管

Glass Passivated Junction General Purpose Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.5A

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GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes)

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JUNCTION PLASTIC RECTIFIER

FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * High reliability * Low cost * Low leakage * Low forward voltage drop * High current capability * Glass passivated junction

Low-voltage variable capacitance diode

DESCRIPTION The BB155 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. FEATURES • Very low capacitance spread • Excellent linearity • Low series resistance • Very small plastic SMD package. APPLICATIONS • Volta

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 6 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) ● Long lifetime, high reliability ● Thin side-view type package

L-BAND SPDT SWITCH

DESCRIPTION The UPG153TB and UPG155TB are L-band SPDT (Single Pole Double Throw) GaAs FET switches for digital cellular or cordless telephone application. The devices can operate from 100 MHz to 2.5 GHz with low insertion loss. These devices are housed in an original 6 pin super mini-mold package