Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting • Pb-free • Halogen-free Applications DC-DC conversion for PC and Server.

Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

TC VN/PVC, 2 C #16 Str BC, PVC-NYL Ins E2, OS, Blk PVC Jkt, 600V TC 90C Dry/Wet SUN RES DIR BUR

Product Description UL Type TC (1277) PVC-Nylon/PVC, 2 Conductor 16AWG (7x24) Bare Copper, PVC-NYL Insulation E2 Color Code, Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC 90C Dry/Wet SUN RES DIR BUR

Inductive Sensors

BES Q40KFU-PAC20A-S04G Basic features Additional features Factor 1 Approval/Conformity CE UKCA cULus WEEE Basic standard IEC 60947-5-2 Trademark Factor 1

Mechanical Cam Switches

BNS 819-B08-R10-46-11 Basic features Approval/Conformity CE UKCA CCC WEEE Basic standard IEC 60947-5-1 Operating principle 1-8. Switch position: Mechanical Version Snap contact

Einbaukupplung mit Push-pull-Verriegelung

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Elect Cu Single Insul Wire Ferrules, Smooth Funnel Entry, 2 AWG, 1.18 L, Tin Plated, Red, For use on Cu Cond.

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