HIGH VOLTAGE DIFFUSED SILICON RECTIFIERS

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Three-Phase Si-Bridge Rectifiers

Three-Phase Si-Bridge Rectifiers • Nominal current 25 A • Repetitive peak reverse voltage 50…1600 V • Metal case Dimensions 40 x 20 x 10 [mm] • Weight approx. 35 g • Compound has classif

Single output 15W ~ 1500W

Features ● marking (Low Voltage Directive) ● 74 models, 15 ~ 1500W ● Wide input voltage range EWS15, 25, 50: 85 ~ 265VAC universal input EWS100, 150, 300, 600: 100/200VAC auto-selectable EWS1500: 100/200VAC user-selectable ● Wide output voltage range: 520 (EWS300, 600, 1500) ●

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB25-12F is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 10 dB at 25 W/175 MHz • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB25-12S is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 10 dB at 25 W/175 MHz • Omnigold™ Metalization System

Three-Phase Si-Bridge Rectifiers

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