Three-Phase Si-Bridge Rectifiers

Three-Phase Si-Bridge Rectifiers • Nominal current 25 A • Repetitive peak reverse voltage 50…1600 V • Metal case Dimensions 40 x 20 x 10 [mm] • Weight approx. 35 g • Compound has classif

Three-Phase Si-Bridge Rectifiers

Three-Phase Si-Bridge Rectifiers Forward Current: 25 A Reverse Voltage: 50 to 1600 V

Three-Phase Si-Bridge-Rectifiers

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Three-Phase Si-Bridge-Rectifiers

Nominal current – Nennstrom 25 A Repetitive peak reverse voltage 400 1600 V Plastic case 35 x 25 x 4 [mm] Pinning – ~~~ + Weight approx. 9 g Plastic material has UL classification 94V

Three Phase Diode Bridge Rectifier Dreiphasen-Dioden-Brückengleichrichter

Features Six diodes in bridge configuration UL recognized, File E175067 Large clearance and creepage Single screw assembly Isolated case Compliant to RoHS (exemp. 7a) REACH, Conflict Minerals 1)

Bridge Rectifiers, Three Phase

Three Phase Bridge Rectifier

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Single output 15W ~ 1500W

Features ● marking (Low Voltage Directive) ● 74 models, 15 ~ 1500W ● Wide input voltage range EWS15, 25, 50: 85 ~ 265VAC universal input EWS100, 150, 300, 600: 100/200VAC auto-selectable EWS1500: 100/200VAC user-selectable ● Wide output voltage range: 520 (EWS300, 600, 1500) ●

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB25-12F is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 10 dB at 25 W/175 MHz • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB25-12S is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 10 dB at 25 W/175 MHz • Omnigold™ Metalization System

Three-Phase Si-Bridge Rectifiers

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