-8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS

This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These ty

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -8A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -8A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

POWER FIELD EFFECT TRANSISTOR

Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 8 AMPERES rDS(on) = 0.4 OHM 80 and 100 VOLTS

POWER FIELD EFFECT TRANSISTOR

Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 8 AMPERES rDS(on) = 0.4 OHM 80 and 100 VOLTS

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -8A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

P-Channel 100 V (D-S) MOSFET

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