8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs

These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regu

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -8A@ TC=25℃ ·Drain Source Voltage -VDSS= -50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

封装/外壳：TO-220-3 包装：卷带（TR） 描述：MOSFET P-CH 50V 8A TO220-3 分立半导体产品 晶体管 - FET，MOSFET - 单个

Trans MOSFET P-CH 50V 8A 3-Pin(3+Tab) TO-220AB

MOSFET P-CH 50V 8A TO-220AB

8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs

These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regu

8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs

These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regu

Single Phase 8.0 Amps. Glass Passivated Bridge Rectifiers

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Single Phase 8.0 Amps. Glass Passivated Bridge Rectifiers

文件：227.83 Kbytes Page：2 Pages