isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxi

8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxi

N-CHANNEL LOGIC LEVEL POWER FIELD EFFECT TRANSISTORS

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Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-220AB

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant

Fast Switching Speed

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N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET

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