8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxi

8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxi

Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-220AB

N-CHANNEL LOGIC LEVEL POWER FIELD EFFECT TRANSISTORS

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PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

N-CHANNEL LOGIC LEVEL POWER FIELD EFFECT TRANSISTORS

文件：232.26 Kbytes Page：4 Pages

N-CHANNEL POWER MOS TRANSISTORS

文件：75.77 Kbytes Page：3 Pages