6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 450V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.25Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs

450V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

450V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

450V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

450V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

Fast Switching Speed

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