50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs

These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

N-Channel Enhancement Mode Power MOSFET

Description The 60N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

60 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A * Ultra low gate charge ( ty

60A, 60V N-CHANNEL POWER MOSFET

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isc N-Channel MOSFET Transistor

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N-Channel 60-V (D-S) MOSFET

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