位置：首页 > IC中文资料第2148页 > RFP2N15
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RFP2N15 | 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive | Intersil |   | |
RFP2N15 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.75Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | |
RFP2N15 | N-Channel 200 V (D-S) MOSFET 文件：1.57598 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
Drain Current ID= 2A@ TC=25C 文件：65.019 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel Enhancement Mode Power MOSFET 文件：751.96 Kbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
N-Channel Enhancement Mode Power MOSFET 文件：867.1 Kbytes Page：6 Pages | LEIDITECH 雷卯电子 | |
RFP2N15产品属性
- 类型
描述
- 型号
RFP2N15
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
- 制造商
RCA
- 功能描述
MOSFET
- 制造商
Harris Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
哈里斯 |
24+ |
NA/ |
325 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HARRIS |
2016+ |
TO-220 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
HARRIS/哈里斯 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
HARRIS(哈利斯) |
20+ |
TO-220-3 |
3000 |
||||
FAIRCHILD/仙童 |
23+ |
TO220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
HARRIS |
25+ |
42 |
公司优势库存 热卖中! |
||||
FAIRCHILD |
24+ |
TO-220 |
11000 |
原装正品 有挂有货 假一赔十 |
|||
RCA |
新 |
10 |
全新原装 货期两周 |
||||
HAR |
24+ |
N/A |
3450 |
||||
HARRIS |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
RFP2N15规格书下载地址
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深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
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DdatasheetPDF页码索引
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