2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

Description These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.05Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

Description\nThese are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive p • 2A, 80V and 100V\n• rDS(ON) 1.05Ω\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• Majority Carrier Device\n• Related Literature\n- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”;

2A 80V AND 100V 1.05 OHM N-CHANNEL POWER MOSFETS

2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

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2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs

The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished th

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

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Trans MOSFET N-CH 80V 2A 3-Pin(3+Tab) TO-220AB

Steering Diode Arrays - ESD Suppressors

Features • (16kV) IEC 61000-4-2 capable • Fast Reverse Recovery Time • Fast Turn on Time • Low Capacitance • SMD Packages Applications • Signal Termination • Signal Conditioning • ESD Suppression • Transient Suppression

COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION RT2N08M is a composite transistor with built-in bias resistor FEATURE ● Built-in bias resistor ( R1=2.2 KΩ , R2=10KΩ ) ● Mini package for easy mounting APPLICATION Inverted circuit , switching circuit , interface circuit , driver circuit

diode terminator network

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