2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

Description These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.05Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

2A 80V AND 100V 1.05 OHM N-CHANNEL POWER MOSFETS

2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

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2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs

The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished th

Trans MOSFET N-CH 80V 2A 3-Pin(3+Tab) TO-220AB

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

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Steering Diode Arrays - ESD Suppressors

Features • (16kV) IEC 61000-4-2 capable • Fast Reverse Recovery Time • Fast Turn on Time • Low Capacitance • SMD Packages Applications • Signal Termination • Signal Conditioning • ESD Suppression • Transient Suppression

diode terminator network

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diode terminator network

文件：211.15 Kbytes Page：2 Pages

diode terminator network

文件：211.15 Kbytes Page：2 Pages

diode terminator network

文件：102.81 Kbytes Page：2 Pages