位置：首页 > IC中文资料第2148页 > RFP25N05
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RFP25N05 | 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching r | Intersil |   | |
RFP25N05 | 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching r | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
RFP25N05 | N-Channel 60 V (D-S) MOSFET 文件：1.31322 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
RFP25N05 | POWER MOS FIELD EFFECT TRANSISTORS 文件：235.65 Kbytes Page：4 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
RFP25N05 | isc N-Channel MOSFET Transistor 文件：244.66 Kbytes Page：2 Pages | ISC 无锡固电 | | |
RFP25N05 | Trans MOSFET N-CH 50V 25A 3-Pin(3+Tab) TO-220AB | ETC 知名厂家 | ETC | |
25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET The RFP25N05L is an N-Channel logic level power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The RFP25N05L was designed for use wit | Intersil | | ||
25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET | RENESAS 瑞萨 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.31324 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) =80mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) =80mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Fast Switching 文件：65.59 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
TMOS IV Power Field Effect Transistor 文件：100.86 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.31383 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
RFP25N05产品属性
- 类型
描述
- 型号
RFP25N05
- 制造商
Harris Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
24+ |
NA/ |
280 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON |
TO-220 |
50000 |
|||||
FAIRCHILD/仙童 |
25+ |
TO-220 |
45000 |
FAIRCHILD/仙童全新现货RFP25N05L即刻询购立享优惠#长期有排单订 |
|||
HARRIS(哈利斯) |
20+ |
TO-220 |
3000 |
||||
VBsemi/台湾微碧 |
23+ |
TO-220AB |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
INTESIL |
23+ |
TO-220 |
8000 |
专做原装正品,假一罚百! |
|||
HARRIS |
新 |
10 |
全新原装 货期两周 |
||||
HAR |
24+ |
N/A |
5000 |
公司存货 |
|||
FSC |
17+ |
TO-220 |
6200 |
||||
FAIRCHILD/仙童 |
23+ |
TO |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
RFP25N05规格书下载地址
RFP25N05参数引脚图相关
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深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
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DdatasheetPDF页码索引
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