型号 功能描述 生产厂家 企业 LOGO 操作
RFP25N05

25A, 50V, 0.047 Ohm, N-Channel Power MOSFET

The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching r

Intersil

RFP25N05

25A, 50V, 0.047 Ohm, N-Channel Power MOSFET

The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching r

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RFP25N05

N-Channel 60 V (D-S) MOSFET

文件:1.31322 Mbytes Page:9 Pages

VBSEMI

微碧半导体

RFP25N05

POWER MOS FIELD EFFECT TRANSISTORS

文件:235.65 Kbytes Page:4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

RFP25N05

isc N-Channel MOSFET Transistor

文件:244.66 Kbytes Page:2 Pages

ISC

无锡固电

RFP25N05

Trans MOSFET N-CH 50V 25A 3-Pin(3+Tab) TO-220AB

ETC

知名厂家

25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET

The RFP25N05L is an N-Channel logic level power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The RFP25N05L was designed for use wit

Intersil

25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET

RENESAS

瑞萨

N-Channel 60 V (D-S) MOSFET

文件:1.31324 Mbytes Page:9 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) =80mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) =80mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Fast Switching

文件:65.59 Kbytes Page:2 Pages

ISC

无锡固电

TMOS IV Power Field Effect Transistor

文件:100.86 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel 60 V (D-S) MOSFET

文件:1.31383 Mbytes Page:9 Pages

VBSEMI

微碧半导体

RFP25N05产品属性

  • 类型

    描述

  • 型号

    RFP25N05

  • 制造商

    Harris Corporation

更新时间:2025-12-23 13:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HARRIS
23+
TO-220
915
全新原装正品现货,支持订货
FAIRCHILD/仙童
23+
TO
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
N/A
48000
一级代理-主营优势-实惠价格-不悔选择
INTERSIL
24+
NA/
280
优势代理渠道,原装正品,可全系列订货开增值税票
VBsemi/台湾微碧
23+
TO-220AB
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
INTESIL
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
INTERSIL
23+
TO-220
50000
全新原装正品现货,支持订货
INTESIL
23+
TO-220
8000
专做原装正品,假一罚百!
FSC
25+
TO-252
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
英特希尔
24+
TO220
5000
全现原装公司现货

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