18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-Channel Enhancement Mode Power MOSFET

Description The 18N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

Fast Switching

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SURFCOIL SMT INDUCTORS

文件：135.45 Kbytes Page：12 Pages

SURFCOIL SMT INDUCTORS

文件：135.45 Kbytes Page：12 Pages

SURFCOIL SMT INDUCTORS

文件：135.45 Kbytes Page：12 Pages