isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.14Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switc

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switc

POWER LOGIC LEVEL MOSFETS

[GE SOLID STATE] POWER LOGIC LEVEL MOSFETS

Power Logic Level MOSFETs

文件：151.19 Kbytes Page：2 Pages

N -CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

DESCRIPTION The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

Fast Switching

文件：67.34 Kbytes Page：2 Pages

15A, 60V N-CHANNEL POWER MOSFET

文件：245.73 Kbytes Page：6 Pages

N-Channel 60 V (D-S) MOSFET

文件：1.00223 Mbytes Page：8 Pages

60V N-Channel Enhancement Mode MOSFET

文件：153.75 Kbytes Page：4 Pages