位置：首页 > IC中文资料第6244页 > RFD8P06
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RFD8P06 | 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg | Intersil |   | |
8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg | Intersil | | ||
8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg | Intersil | | ||
8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regu | Intersil | | ||
8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regu | Intersil | | ||
8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs 文件：128.979 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs 文件：128.979 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs 文件：128.979 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
P-Channel 60-V (D-S) MOSFET 文件：939.7 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
P-Channel MOSFET 文件：180.58 Kbytes Page：4 Pages | KEXIN 科信电子 | |
RFD8P06产品属性
- 类型
描述
- 型号
RFD8P06
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRIS |
24+ |
TO-251 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VBsemi |
21+ |
TO251 |
10020 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INTERSIL |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
3700 |
原厂直销,现货供应,账期支持! |
|||
HARRIS(哈利斯) |
20+ |
- |
3000 |
||||
RENESAS |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
FSC/ON |
23+ |
原包装原封 □□ |
7200 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
|||
ON/安森美 |
24+ |
TO-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
HAR |
23+ |
RFD8P06LE |
13528 |
振宏微原装正品,假一罚百 |
|||
FAIRCHILD |
08+ |
TO-252 |
5000 |
普通 |
RFD8P06芯片相关品牌
RFD8P06规格书下载地址
RFD8P06参数引脚图相关
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RFD8P06数据表相关新闻
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2021-6-10RFBLN0605040YM9T16深圳市光华微科技有限公司18138231376
联系人：刘冬英 电话：0755-83203002 手机：18138231376、18806643356 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司 公司地址：深圳市福田区振兴路华匀大厦1栋712室
2019-8-15RFBLN0605040YM9T16深圳市光华微科技有限公司18138231376
联系人：刘冬英 电话：0755-83203002 手机：18138231376、18806643356 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司 公司地址：深圳市福田区振兴路华匀大厦1栋712室
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RFDIP160806BLM6T25原装现货
2019-6-28RFFC5072A原装Qorvo射频混合器85-4200MHzLO现货
只做原装，假一罚十，可开16%增值税票。TE.NXP.ON.Renesas.Microchip.英飞凌.ALLEGRO
2019-3-14
DdatasheetPDF页码索引
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