12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.063Ω,VGS=10V -rDS(ON)=0.071Ω,VGS=5V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.fairchildsemi.com •PeakCurrentvsPulse

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.063Ω,VGS=10V -rDS(ON)=0.071Ω,VGS=5V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.fairchildsemi.com •PeakCurrentvsPulse

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

60VN-ChannelMOSFET

Features •UltraLowOn-Resistance -RDS(ON)

N-channelEnhancementModePowerMOSFET

Features VDS=60V,ID=30A RDS(ON)

N-Channel60-V(D-S)MOSFET

文件：896.99 Kbytes Page：6 Pages

60VN-ChannelDTMOS

Features TrenchPowerDTMOSTechnology LowRDS(ON) LowGateCharge OptimizedforFast-switchingApplications Applications SynchronousRectificationinDC/DCandAC/DCConverters IsolatedDC/DCConvertersinTelecomandIndustrial

12Amps,60VoltsN-CHANNELPOWERMOSFET

文件：195.03 Kbytes Page：5 Pages

N-Channel60V(D-S)MOSFET

文件：1.75352 Mbytes Page：8 Pages

12A,60VN-CHANNELPOWERMOSFET

文件：194.68 Kbytes Page：3 Pages

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

文件：230.11 Kbytes Page：5 Pages