12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs

These N-Channel logic level ESD protected power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic

17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10V - rDS(ON) = 0.071Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 63mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 63mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10V - rDS(ON) = 0.071Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse

12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs

These N-Channel logic level ESD protected power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic

60V N-Channel MOSFET

Features • Ultra Low On-Resistance - RDS(ON)

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

N 沟道，UltraFET 功率 MOSFET，60V，17 A，71mΩ

N-Channel 6 0-V (D-S) MOSFET

文件：896.99 Kbytes Page：6 Pages

60V N-Channel DTMOS

Features  Trench Power DTMOS Technology  Low RDS(ON)  Low Gate Charge  Optimized for Fast-switching Applications Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial

12 Amps, 60 Volts N-CHANNEL POWER MOSFET

文件：195.03 Kbytes Page：5 Pages

N-Channel 60 V (D-S) MOSFET

文件：1.75352 Mbytes Page：8 Pages

12A, 60V N-CHANNEL POWER MOSFET

文件：194.68 Kbytes Page：3 Pages

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

文件：230.11 Kbytes Page：5 Pages