丝印代码：12N06LE；60V N-Channel MOSFET

Features • Ultra Low On-Resistance - RDS(ON)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 63mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs

These N-Channel logic level ESD protected power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic

17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10V - rDS(ON) = 0.071Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse

17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10V - rDS(ON) = 0.071Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse

12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs

These N-Channel logic level ESD protected power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 63mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

丝印代码：12N06LE；60V N-Channel MOSFET

Features • Ultra Low On-Resistance - RDS(ON)

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

N-Channel 6 0-V (D-S) MOSFET

文件：897.04 Kbytes Page：6 Pages

17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

N 沟道，UltraFET 功率 MOSFET，60V，17 A，71mΩ

N-Channel 6 0-V (D-S) MOSFET

文件：896.99 Kbytes Page：6 Pages

60V N-Channel DTMOS

Features  Trench Power DTMOS Technology  Low RDS(ON)  Low Gate Charge  Optimized for Fast-switching Applications Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial

N-Channel 60 V (D-S) MOSFET

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12 Amps, 60 Volts N-CHANNEL POWER MOSFET

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12A, 60V N-CHANNEL POWER MOSFET

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N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

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