CDMA / UMTS / LTE Band 3 Linear Power Amplifier Module

Qorvo's RF7303 is a high-power, high-efficiency linear power amplifier designed for use as final amplification stage in a 3V, 50 ohm, LTE/UMTS/CDMA mobile cellular equipment. This PA is developed for the EUTRAN/LTE Bands within the 1710MHz to 1785MHz and along with CDMA Band 15 (BC15) that operates • Multi-Mode LTE/UMTS/CDMA\n• LTE/UMTS Bands 3, 4, 9, and 10\n• CDMA Band Class 15\n• LTE PA Efficiency 38%, +28dBm\n• Best-in-Class Current Consumption\n• Optimized use with DC-DC converter Operation\n• Three Power States with Digital Control Interface\n• Integrated Power Coupler\n• Integrated ;

3V LTE/UMTS/CDMA BAND 3 LINEAR PA MODULE

文件：205.5 Kbytes Page：2 Pages

3V LTE/UMTS/CDMA BAND 3 LINEAR PA MODULE

文件：205.5 Kbytes Page：2 Pages

3V LTE/UMTS/CDMA BAND 3 LINEAR PA MODULE

文件：205.5 Kbytes Page：2 Pages

3V LTE/UMTS/CDMA BAND 3 LINEAR PA MODULE

文件：205.5 Kbytes Page：2 Pages

2.7 V to 5.5 V, Serial Input, Dual Voltage Output 8-Bit DAC

GENERAL DESCRIPTION The AD7303 is a dual, 8-bit voltage out DAC that operates from a single +2.7 V to +5.5 V supply. Its on-chip precision output buffers allow the DAC outputs to swing rail to rail. This device uses a versatile 3-wire serial interface that operates at clock rates up to 30 MHz, an

2.7 V to 5.5 V, Serial Input, Dual Voltage Output 8-Bit DAC

GENERAL DESCRIPTION The AD7303 is a dual, 8-bit voltage out DAC that operates from a single +2.7 V to +5.5 V supply. Its on-chip precision output buffers allow the DAC outputs to swing rail to rail. This device uses a versatile 3-wire serial interface that operates at clock rates up to 30 MHz, an

2.7 V to 5.5 V, Serial Input, Dual Voltage Output 8-Bit DAC

GENERAL DESCRIPTION The AD7303 is a dual, 8-bit voltage out DAC that operates from a single +2.7 V to +5.5 V supply. Its on-chip precision output buffers allow the DAC outputs to swing rail to rail. This device uses a versatile 3-wire serial interface that operates at clock rates up to 30 MHz, an

Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a high radiant intensity without external optics. Features • High radiant intensity • Suitable for pulse operation • Angle of half intens