400 W, 40 V, 1.2 to 1.5 GHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internally matched pair transistors in push-pull configuration • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In complia

650 W, 28/32 V, 0.4 to 1 GHz RF power LDMOS transistor