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RF2115

HIGH POWER UHF AMPLIFIER

Product Description The RF2115L is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at

RFMD

威讯联合

RF2115

HIGH POWER UHF AMPLIFIER

QORVO

威讯联合

HIGH POWER UHF AMPLIFIER

Product Description The RF2115L is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at

RFMD

威讯联合

HIGH POWER UHF AMPLIFIER

Product Description The RF2115L is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at

RFMD

威讯联合

HIGH POWER UHF AMPLIFIER

QORVO

威讯联合

UHF-band Device Series

UHF-band Device Series

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

DUAL OPERATIONAL AMPLIFIER

文件:253.15 Kbytes Page:6 Pages

NJRC

日本无线

DUAL OPERATIONAL AMPLIFIER

文件:253.15 Kbytes Page:6 Pages

NJRC

日本无线

DUAL OPERATIONAL AMPLIFIER

文件:253.15 Kbytes Page:6 Pages

NJRC

日本无线

DUAL OPERATIONAL AMPLIFIER

文件:253.15 Kbytes Page:6 Pages

NJRC

日本无线

RF2115产品属性

  • 类型

    描述

  • 型号

    RF2115

  • 制造商

    RFMD

  • 制造商全称

    RF Micro Devices

  • 功能描述

    HIGH POWER UHF AMPLIFIER

更新时间:2026-8-1 16:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TE/泰科
2608+
/
343380
一级代理,原装现货

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