位置：首页 > IC中文资料第7034页 > RF2115L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RF2115L | HIGH POWER UHF AMPLIFIER Product Description The RF2115L is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at | RFMD 威讯联合 |   | |
RF2115L | HIGH POWER UHF AMPLIFIER | QORVO 威讯联合 | | |
HIGH POWER UHF AMPLIFIER Product Description The RF2115L is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at | RFMD 威讯联合 | | ||
UHF-band Device Series UHF-band Device Series | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 | | ||
DUAL OPERATIONAL AMPLIFIER 文件：253.15 Kbytes Page：6 Pages | NJRC 日本无线 | | ||
DUAL OPERATIONAL AMPLIFIER 文件：253.15 Kbytes Page：6 Pages | NJRC 日本无线 | | ||
DUAL OPERATIONAL AMPLIFIER 文件：253.15 Kbytes Page：6 Pages | NJRC 日本无线 | | ||
DUAL OPERATIONAL AMPLIFIER 文件：253.15 Kbytes Page：6 Pages | NJRC 日本无线 | |
RF2115L产品属性
- 类型
描述
- 型号
RF2115L
- 制造商
RFMD
- 制造商全称
RF Micro Devices
- 功能描述
HIGH POWER UHF AMPLIFIER
RF2115L芯片相关品牌
RF2115L规格书下载地址
RF2115L参数引脚图相关
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RF2115L数据表相关新闻
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DdatasheetPDF页码索引
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